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Paperback (General Books; Jul 1 2010)

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Transistor Modeling: Transistor Models, Threshold Voltage, Early Effect, Hybrid-Pi Model, Subthreshold Conduction, Mastar Mosfet Model
Purchase includes free access to book updates online and a free trial membership in the publisher's book club where you can select from more than a million books without charge. Chapters: Transistor Models, Threshold Voltage, Early Effect, Hybrid-Pi Model, Subthreshold Conduction, Mastar Mosfet Model, Drain Induced Barrier Lowering, Compact Model Council, Ekv Mosfet Model, Bsim, Reverse Short-Channel Effect, Gummel-poon Model, Subthreshold Slope, Short-Channel Effect, Nqs. Excerpt: BSIM (Berkeley Short-channel IGFET Model) refers to a family of MOSFET transistor models for integrated circuit design. Accurate transistor models are needed for electronic circuit simulation , which in turn is needed for integrated circuit design . As the devices become smaller each process generation (see Moore's law ), new models are needed to accurately reflect the transistor's behavior. Commercial and industrial analog simulators (such as SPICE ) have added many other device models as technology advanced and earlier models became inaccurate. To attempt standardization of these models so that a set of model parameters may be used in different simulators, an industry working group was formed, the Compact Model Council , to choose, maintain and promote the use of standard models . BSIM models, developed at UC Berkeley are one of these standards. They include BSIM3 , BSIM4 , and BSIMSOI . Other models supported by the council are PSP, HICUM, and MEXTRAM. References (URLs online) See also (online edition) A hyperlinked version of this chapter is at The Compact Model Council is a working group in the Electronic Design Automation industry formed to choose, maintain and promote the use of standard models . Commercial and industrial analog simulators (such as SPICE ) need to add device models as technology advances (see Moore's law ) and earlier models become inaccurate. Before this group was formed, new transistor models were largely proprietary, which severely limited the choice
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